| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
72,320 pcs
|
72320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| Tape & Reel |
The Vishay Si7617DN is a P-Channel power MOSFET designed for applications such as notebook battery charging and notebook adapter switching. It utilizes Vishay's TrenchFET technology for improved performance.
Key electrical specifications include a drain-source voltage (VDS) of -30V and a typical on-resistance (Rds(on)) of 0.0123 Ohms at VGS = -10V. The continuous drain current (ID) is rated at -35A at 25°C case temperature. The device also features a typical gate charge (Qg) of 20.5 nC.
This MOSFET is housed in a compact 3.3mm x 3.3mm PowerPAK 1212-8 single package, suitable for surface mounting. It is tested 100% for Rg and UIS, ensuring reliability.
The operating junction and storage temperature range is from -55°C to +150°C. The device is also specified as Lead (Pb)-free and halogen-free.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is -30V.
The typical on-resistance (Rds(on)) is 0.0123 Ohms at VGS = -10V.
The package type is PowerPAK 1212-8 Single.
The operating junction and storage temperature range is -55°C to +150°C.
Yes, the Si7617DN is specified as Lead (Pb)-free and halogen-free.