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60,267 pcs
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60267 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Vishay Dale SI7501DN is a complementary dual N-channel and P-channel MOSFET designed for various applications. It offers a drain-source voltage rating of 30V. The device exhibits low on-resistance values, with typical measurements of 0.051 Ohms at VGS = 10V for the P-channel and 0.035 Ohms at VGS = 10V for the N-channel. It also provides typical on-resistance values of 0.075 Ohms at VGS = 6V and 0.050 Ohms at VGS = 4.5V.
This MOSFET is housed in a low-profile PowerPAK 1212-8 package, making it suitable for space-constrained designs. Its SMT mounting type ensures easy integration into printed circuit boards. Applications include backlighting inverters and DC-DC converters, particularly in 4-cell battery configurations.
Key electrical characteristics include typical continuous drain current ratings of 6.4A for the P-channel and 7.7A for the N-channel, with other values provided at different gate-source voltages. The package height is a mere 1.07mm, contributing to its low-profile design.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage rating is 30V.
The SI7501DN is available in a PowerPAK 1212-8 surface-mount package.
The typical on-resistance is 0.035 Ohms at VGS=10V, 0.050 Ohms at VGS=4.5V, and 0.051 Ohms at VGS=10V (another condition).
The typical continuous drain current is up to 7.7A depending on conditions.
It is surface-mount (SMT).
The package height is 1.07 mm.