| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,657 pcs
|
51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type | |
| Tape & Reel |
The Vishay Siliconix Si7460DP is a high-performance N-Channel MOSFET. It is engineered for fast switching applications and features a 60V drain-source voltage rating.
Key electrical characteristics include a low drain-source on-state resistance (RDS(on)) of 0.008 Ω typical at VGS = 10 V and ID = 18 A, and 0.012 Ω typical at VGS = 4.5 V and ID = 16 A. The gate threshold voltage is typically 1-3V.
This MOSFET is housed in a low-profile PowerPAK SO-8 package, suitable for surface mounting. The package offers low thermal resistance, contributing to efficient heat dissipation during operation. It is designed with TrenchFET technology for enhanced performance.
The Si7460DP is available in lead-free and halogen-free options, catering to environmental compliance requirements.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60V.
The continuous drain current is 18A at 25°C ambient temperature and 14A at 70°C.
The typical on-state resistance is 0.008Ω at VGS = 10V and ID = 18A, with a maximum of 0.0096Ω. At VGS = 4.5V and ID = 16A, the typical value is 0.012Ω.
The maximum power dissipation is 5.4W at 25°C ambient temperature and 3.4W at 70°C.
The operating junction and storage temperature range is -55°C to 150°C.
The SI7460DP is available in a PowerPAK SO-8 surface-mount package.
The gate threshold voltage ranges from 1V to 3V.
