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400 pcs
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400 pcs | On Request | 1 | On Request | On Request | 22+ | On Request | On Request |
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The SI7232DN-T1-GE3 is a 20V N-Channel MOSFET manufactured by VIS. It features a drain-source voltage rating of 20V and a gate-source voltage rating of ±8V. The device can handle a maximum continuous drain current of 25A at a case temperature of 25°C (package limited) and a pulsed drain current of 40A. Power dissipation is rated at 23W at TC=25°C, derating to 14.8W at TC=70°C. The MOSFET is avalanche rated with a single pulse avalanche current of 15A and avalanche energy of 11mJ. The source-drain diode supports a continuous current of 19A at TC=25°C. The operating junction temperature range extends up to 150°C. These specifications make the SI7232DN-T1-GE3 suitable for power switching and management applications.
The drain-source voltage rating is 20 V.
The maximum operating junction temperature is 150 °C.
The maximum continuous drain current is 25 A at TC = 25 °C (package limited).
The maximum power dissipation is 23 W at TC = 25 °C.
The gate-source voltage rating is ±8 V.
Yes, the single pulse avalanche current is 15 A and avalanche energy is 11 mJ.