SI4431BDY-T1-E3
NA
The Vishay Si4431BDY is a P-Channel MOSFET with a 30V drain-source voltage rating. It is available in an SO-8 package.
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106 pcs
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106 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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| Halogen Free | |
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The Vishay Siliconix SI4966DY-T1-E3 is a Dual N-Channel MOSFET with a drain-source voltage (VDS) of 20V and a continuous drain current (ID) of up to 7.1A at 25°C. This MOSFET utilizes TrenchFET Power MOSFET technology, offering improved performance and efficiency.
Key electrical characteristics include a low on-state resistance (RDS(on)) of 0.025 Ohms at VGS = 4.5V and 0.035 Ohms at VGS = 2.5V. The gate threshold voltage (VGS(th)) ranges from 0.6V to 1.5V. Dynamic characteristics include a total gate charge (Qg) of 50nC at VDS = 10V, VGS = 4.5V, and ID = 7.1A.
This device is housed in a compact SO-8 package and is suitable for surface mounting. It operates within a junction and storage temperature range of -55°C to 150°C. The SI4966DY-T1-E3 is Halogen-free and Lead (Pb)-free, complying with relevant environmental standards.
The maximum drain-source voltage (VDS) for the SI4966DY-T1-E3 is 20V.
The continuous drain current (ID) at 25°C for the SI4966DY-T1-E3 is 7.1A.
The on-state resistance (RDS(on)) at VGS = 4.5V and ID = 7.1A is a maximum of 0.025 Ohms.
The operating junction and storage temperature range is -55°C to 150°C.
The SI4966DY-T1-E3 is available in an SO-8 package.
Yes, the SI4966DY-T1-E3 is RoHS3 Compliant.
Yes, the SI4966DY-T1-E3 is Halogen-free.