| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
11 pcs
|
11 pcs | On Request | 1 | On Request | On Request | 07+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Style | |
| Mounting Type | |
| Package / Case |
The Vishay Siliconix SI4850EY-T1-E3 is a high-performance N-Channel Power MOSFET featuring TrenchFET technology. It is designed for reduced gate charge (Qg) and fast switching capabilities, making it suitable for various power management applications.
Key electrical characteristics include a maximum drain-source voltage (VDS) of 60V and a low on-state resistance (RDS(on)) of 0.022 Ω at VGS = 10V and ID = 6.0A. The continuous drain current (ID) is rated at 8.5A at 25°C ambient temperature. The device operates over a wide temperature range from -55°C to 175°C, with a maximum junction temperature of 175°C.
Packaged in an SO-8 surface mount package, the SI4850EY-T1-E3 is compliant with RoHS Directive 2002/95/EC and is halogen-free according to IEC 61249-2-21 definition. Its robust design and thermal performance, including a junction-to-ambient thermal resistance of 36°C/W, ensure reliability in demanding applications.
This MOSFET is ideal for use in power supplies, DC-DC converters, and motor control circuits where efficiency and fast response are critical. The low gate charge and resistance contribute to reduced switching losses.
SO-8 surface mount package.
-55 to 175 °C.
60 V.
8.5 A.
22 mΩ at VGS=10V, ID=6A.
1.3 V.
Yes, halogen-free.