| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51,657 pcs
|
51657 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Vishay Dale Si4946BEY is a dual N-channel power MOSFET with a 60V drain-source breakdown voltage and a maximum junction temperature of 175°C. It utilizes TrenchFET technology for improved performance and efficiency.
Key electrical characteristics include a low on-state resistance, with typical values of 0.033 Ω at VGS = 10 V and ID = 5.3 A, and 0.041 Ω at VGS = 4.5 V and ID = 4.7 A. The device is rated for continuous drain currents up to 6.5 A at 25°C case temperature.
This MOSFET is compliant with RoHS3 directives and is halogen-free. It is supplied in a surface-mount SO-8 package, suitable for various industrial and consumer electronics applications where high temperature operation and reliable performance are required.
Absolute maximum ratings include a gate-source voltage of ±20V and a pulsed drain current of 30A. Thermal resistance ratings are provided for junction-to-ambient and junction-to-foot, indicating its thermal management capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.64 | $1.64 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (VDS) is 60 V.
The maximum operating junction temperature is 175 °C.
The typical on-state resistance (Rds(on)) at VGS = 10 V and ID = 5.3 A is 0.033 Ω.
The typical on-state resistance (Rds(on)) at VGS = 4.5 V and ID = 4.7 A is 0.041 Ω.
The Si4946BEY is supplied in an SO-8 package.
Yes, the Si4946BEY is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.