SI4943CDY-T1-E3
Vishay
The Vishay Dale SI4943CDY-T1-E3 is a dual P-channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a continuous drain current of 8A.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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401,778 pcs
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401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Configuration | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| FET Feature | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI4943CDY-T1-GE3 is a dual P-channel MOSFET designed for various electronic applications. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current rating of 8A. The on-resistance (Rds On) is specified as a maximum of 19.2mOhm at 8.3A and 10V.
This MOSFET features a logic level gate, making it suitable for low-voltage control applications. Key electrical parameters include a gate charge (Qg) of 62nC maximum at 10V and an input capacitance (Ciss) of 1945pF maximum at 10V. The gate threshold voltage (Vgs(th)) is a maximum of 3V at 250µA.
Packaged in an 8-SOIC (0.154", 3.90mm Width) format, the SI4943CDY-T1-GE3 is designed for surface mounting. It operates within a temperature range of -50°C to 150°C (TJ) and has a power dissipation rating of 3.1W.
Compliance information indicates RoHS3 compliance, MSL 1 (Unlimited) moisture sensitivity, and REACH unaffected status, though these are based on available database information and may require verification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maxium Vdss is 20V.
It is housed in an 8-SOIC (0.154", 3.90mm Width) package.
The operating junction temperature range is -50°C to 150°C.
The maximum continuous drain current is 8A.
The maximum on-resistance is 19.2mOhm at 8.3A and 10V Vgs.
Yes, the gate threshold voltage (Vgs(th)) is up to 3V at 250µA, indicating logic-level compatability.
It has two P-channel MOSFETs in a dual configuration.