SI4943CDY-T1-E3 The Vishay Dale SI4943CDY-T1-E3 is a dual P-channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a continuous drain current of 8A.
Mfr Part #:

SI4943CDY-T1-E3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay Dale SI4943CDY-T1-E3 is a dual P-channel MOSFET designed for various applications. It features a 20V drain-to-source voltage and a continuous drain current of 8A.
✓ Total Stock: 1,024 pcs
$ Price Range: $0.99

SI4943CDY-T1-E3 Available from 1 distributor

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,024 pcs
1024 pcs On Request 1 On Request On Request 15+ On Request On Request

SI4943CDY-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Configuration
Current
Drain to Source Voltage (Vdss)
FET Feature
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Lead Style
Mounting Type
Operating Temperature
Power
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs(th) (Max) @ Id

SI4943CDY-T1-E3 Description

Short technical summary and product information.

The Vishay Dale SI4943CDY-T1-E3 is a dual P-channel MOSFET with a 20V drain-to-source voltage rating and a continuous drain current capability of 8A. This device offers a maximum on-resistance of 19.2mOhm at 8.3A and 10V, and a gate charge of 62nC at 10V.

 

Featuring a logic level gate, this MOSFET is suitable for applications requiring lower gate drive voltages. It operates within a temperature range of -50°C to 150°C (TJ) and has a power dissipation of 3.1W.

 

The component is housed in an 8-SOIC package with a surface mount type, making it convenient for integration into compact electronic designs. Its input capacitance is rated at a maximum of 1945pF at 10V.

 

This MOSFET is RoHS3 compliant and has an MSL rating of 1.

SI4943CDY-T1-E3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4943CDY-T1-E3 Dual P-Channel MOSFET
Subcategory: Arrays

SI4943CDY-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4943CDY-T1-E3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4943CDY-T1-E3 Features

  • Dual P-channel MOSFET configuration.
  • 20V drain-to-source voltage rating.
  • 8A continuous drain current capability.
  • Low Rds On of 19.2mOhm at 8.3A, 10V.
  • Surface mount 8-SOIC package.

SI4943CDY-T1-E3 Applications

  • Suitable for power switching applications.
  • Ideal for battery management circuits.
  • Used in load switch designs.
  • Applicable in low-voltage motor control.

SI4943CDY-T1-E3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SI4943CDY-T1-E3?

The maximum drain-to-source voltage is 20V.

What is the continuous drain current of the SI4943CDY-T1-E3?

The continuous drain current is 8A.

What is the maximum on-resistance for this MOSFET?

The maximum on-resistance is 19.2mOhm at 8.3A and 10V.

What is the operating temperature range?

The operating temperature range is -50°C to 150°C (TJ).

What type of package is the SI4943CDY-T1-E3 in?

It is in an 8-SOIC package.

Is the SI4943CDY-T1-E3 RoHS compliant?

Yes, it is RoHS3 compliant.

What is the Moisture Sensitivity Level (MSL) for this part?

The Moisture Sensitivity Level is 1.

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