| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
100,000 pcs
|
100000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Vishay Siliconix SI4862DY is an N-Channel Power MOSFET featuring TrenchFET technology, rated for 2.5V gate drive. It offers a low Drain-Source On-State Resistance (RDS(on)) as low as 3.3 mΩ at VGS = 4.5 V and 20 A, and 5.5 mΩ at VGS = 2.5 V and 20 A. The device has a continuous drain current capability of up to 25 A at TA = 25 °C.
Key electrical characteristics include a Gate Threshold Voltage (VGS(th)) of 0.6 V, and dynamic parameters such as Total Gate Charge (Qg) of 70 nC maximum. The MOSFET is housed in a standard SO-8 package and is suitable for surface mounting.
Applications include synchronous rectification and low output voltage synchronous rectification. The device is designed for efficient power conversion and switching applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) is 16V.
The SI4862DY is housed in an SO-8 (SOP-8) surface-mount package.
The operating junction temperature range is -55°C to 150°C.
The typical drain-source on-resistance (RDS(on)) is 2.7mΩ at VGS=4.5V and ID=25A.
The continuous drain current (Id) is 25A at TA=25°C (with duty cycle limitations; steady-state at 10s is 17A).
The typical gate threshold voltage (Vgs(th)) is 0.6V at ID=250µA.