| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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20 pcs
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20 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Vishay Siliconix SI4840DY is an N-Channel Power MOSFET designed for various electronic applications. It features a drain-source voltage (VDS) of 40V and offers low on-state resistance (rDS(on)) at specified gate-source voltages.
Key electrical characteristics include a gate threshold voltage ranging from 1.0V to 3.0V and a continuous drain current capability of up to 10A at 25°C ambient temperature. The device also exhibits dynamic characteristics such as total gate charge and switching times, making it suitable for power switching circuits.
Packaged in a standard SO-8 surface-mount package, the SI4840DY is designed for efficient thermal management, with junction-to-ambient thermal resistance ratings provided for different conditions. Its robust construction and tested parameters ensure reliable performance in demanding applications.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is 40 V.
The typical drain-source on-state resistance (rDS(on)) at VGS = 10V is 0.0075 Ω.
The typical drain-source on-state resistance (rDS(on)) at VGS = 4.5V is 0.0095 Ω.
The SI4840DY is available in an SO-8 package.
The operating junction and storage temperature range is -55°C to 150°C.