SI4835DDY-T1-GE3 P-Channel MOSFET with 30V drain-source voltage and 13A continuous drain current in an 8SO package.
Mfr Part #:

SI4835DDY-T1-GE3

Available from 3 distributors
Mfr Name: Vishay
Vishay
P-Channel MOSFET with 30V drain-source voltage and 13A continuous drain current in an 8SO package.
✓ Total Stock: 265,285 pcs
$ Price Range: $0.99

SI4835DDY-T1-GE3 Available from 3 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
258,286 pcs
258286 pcs On Request 1 On Request On Request On Request On Request On Request
Non-Authorised Inventory information
4,399 pcs
4399 pcs On Request 1 On Request On Request 21+ On Request On Request
Non-Authorised Inventory information
2,600 pcs
2600 pcs On Request 1 On Request On Request 14+ On Request On Request

SI4835DDY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4835DDY-T1-GE3 Description

Short technical summary and product information.

The SI4835DDY-T1-GE3 is a P-Channel MOSFET from Vishay Dale. It features a drain-source voltage (Vds) of 30V and a continuous drain current (Id) of 13A. This device is housed in an 8SO surface-mount package, suitable for automated assembly processes.

 

This MOSFET is designed for switching and power management applications where P-Channel polarity is required. The 30V rating makes it appropriate for low-voltage DC circuits, while the 13A current capability supports moderate power loads.

 

The 8SO package offers a compact footprint for space-constrained PCB designs. As a discrete semiconductor component, it is used in various electronic systems requiring efficient power switching.

SI4835DDY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: SI4835DDY-T1-GE3 P-Channel MOSFET
Subcategory: Single MOSFET

SI4835DDY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: Compliant

SI4835DDY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4835DDY-T1-GE3 Features

  • P-Channel MOSFET for switching applications.
  • 30V drain-source voltage rating.
  • 13A continuous drain current capability.
  • 8SO surface-mount package.
  • Designed for automated PCB assembly.

SI4835DDY-T1-GE3 Applications

  • Power management in portable electronics.
  • Load switching in low-voltage DC circuits.
  • Battery protection and management systems.
  • DC-DC converter output switching.
  • General purpose power switching.

SI4835DDY-T1-GE3 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SI4835DDY-T1-GE3?

The drain-source voltage (Vds) is 30V.

What is the continuous drain current rating?

The continuous drain current (Id) is 13A.

What package type is the SI4835DDY-T1-GE3 available in?

It is available in an 8SO surface-mount package.

Is this a P-Channel or N-Channel MOSFET?

It is a P-Channel MOSFET.

SI4835DDY-T1-GE3 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SI4835DDY-T1-E3
SI4835DDY-T1-E3
Vishay
The SI4835DDY-T1-E3 is a P-Channel MOSFET from Vishay Dale with a maximum drain-to-source voltage of 30V and continuous drain current of 13A. It features a low on-resistance of 18mOhm at 10V gate drive.
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