SI4835DDY-T1-GE3
Vishay
P-Channel MOSFET with 30V drain-source voltage and 13A continuous drain current in an 8SO package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,020 pcs
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6020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
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| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4835DDY-T1-E3 is a P-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for high-efficiency power management applications requiring a compact surface-mount package.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current rating of 13A at case temperature (Tc). The device features a low on-resistance (Rds(on)) of 18mOhm maximum at 10A drain current and 10V gate-to-source voltage. Gate threshold voltage is 3V maximum at 250µA drain current. The MOSFET can dissipate up to 2.5W at ambient temperature and 5.6W at case temperature.
The device is housed in an 8-SOIC (0.154", 3.90mm Width) surface-mount package with a supplier device package of 8-SOIC. It supports surface-mount mounting for automated assembly processes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 30V.
The continuous drain current is 13A at case temperature (Tc).
The maximum on-resistance (Rds(on)) is 18mOhm at 10A drain current and 10V gate-to-source voltage.
The device is available in an 8-SOIC (0.154", 3.90mm Width) surface-mount package.
The operating junction temperature range is -55°C to 150°C.