SI4686DY-T1-GE3
Vishay
The Vishay SI4686DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 18.2A continuous current. It is designed for surface mounting in an 8-SOIC package.
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6,594 pcs
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6594 pcs | On Request | 1 | On Request | On Request | 09+ | On Request | On Request | |
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2,948 pcs
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2948 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,948 pcs
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2948 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,199 pcs
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2199 pcs | On Request | 1 | On Request | On Request | 08+ | On Request | On Request | |
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1,674 pcs
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1674 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request |
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| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4686DY-T1-E3 from Vishay Dale is a high-performance N-Channel MOSFET. It is designed for use in various electronic circuits requiring efficient switching and power handling capabilities.
Key electrical specifications include a maximum drain-to-source voltage (Vdss) of 30V and a continuous drain current of 18.2A at case temperature. The MOSFET exhibits a low on-resistance (Rds On) of 9.5mOhm at 13.8A and 10V Vgs, with a gate threshold voltage (Vgs(th)) of 3V at 250µA. It also features a gate charge (Qg) of 26nC at 10V Vgs and an input capacitance (Ciss) of 1220pF at 15V Vds.
This device operates within a temperature range of -55°C to 150°C (TJ). The MOSFET is constructed using Metal Oxide technology and is suitable for applications requiring robust performance.
The SI4686DY-T1-E3 comes in an 8-SOIC surface mount package, offering a compact solution for board space constraints. The standard package is 8-SOIC, and it is designed for surface mounting.
| Qty | Low | High |
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Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
8-SOIC (0.154", 3.90mm Width).
-55°C to 150°C (junction).
9.5mOhm at 13.8A, 10V.
3V max at 250µA.
18.2A at case temperature.
26nC at 10V.