SI4686DY-T1-GE3 The Vishay SI4686DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 18.2A continuous current. It is designed for surface mounting in an 8-SOIC package.
Mfr Part #:

SI4686DY-T1-GE3

Available from 1 distributors
Mfr Name: Vishay
Vishay
The Vishay SI4686DY-T1-GE3 is an N-Channel MOSFET with a 30V drain-source voltage and 18.2A continuous current. It is designed for surface mounting in an 8-SOIC package.
✓ Total Stock: 12,500 pcs
$ Price Range: $0.99

SI4686DY-T1-GE3 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
12,500 pcs
12500 pcs On Request 1 On Request On Request 1803+ On Request On Request

SI4686DY-T1-GE3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
SVHC Present
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SI4686DY-T1-GE3 Description

Short technical summary and product information.

The Vishay SI4686DY-T1-GE3 is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous current of 18.2A at the case temperature.

 

Key electrical characteristics include a low on-resistance (Rds On) of 9.5mOhm at 13.8A and 10V, and a gate charge (Qg) of 26nC at 10V. The gate threshold voltage (Vgs(th)) is 3V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.

 

This MOSFET operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a standard 8-SOIC package, suitable for surface mounting. The component's power dissipation is rated at 3W (ambient) or 5.2W (case).

 

This device is suitable for power management circuits, switching applications, and general-purpose amplification where efficient power control is required.

SI4686DY-T1-GE3 Quick Information

Product Type: MOSFET
Canonical Name: Vishay Dale SI4686DY-T1-GE3 N-Channel MOSFET
Subcategory: N-Channel

SI4686DY-T1-GE3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SI4686DY-T1-GE3 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI4686DY-T1-GE3 Features

  • N-Channel MOSFET with 30V Vdss.
  • Continuous current rating of 18.2A.
  • Low Rds On of 9.5mOhm at 13.8A, 10V.
  • Wide operating temperature range.
  • Surface mount 8-SOIC package.

SI4686DY-T1-GE3 Applications

  • Suitable for power switching circuits.
  • Ideal for DC-DC converters.
  • Used in motor control applications.
  • Applicable for load management.

SI4686DY-T1-GE3 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain-to-source voltage for the SI4686DY-T1-GE3?

The maximum drain-to-source voltage (Vdss) for the SI4686DY-T1-GE3 is 30V.

What is the continuous current rating of the SI4686DY-T1-GE3 MOSFET?

The SI4686DY-T1-GE3 MOSFET has a continuous current rating of 18.2A.

What is the Rds On (Max) for the SI4686DY-T1-GE3 at specified conditions?

The Rds On (Max) for the SI4686DY-T1-GE3 is 9.5mOhm at 13.8A and 10V.

What is the operating temperature range of the SI4686DY-T1-GE3?

The operating temperature range for the SI4686DY-T1-GE3 is -55°C to 150°C (TJ).

What package type is the SI4686DY-T1-GE3 MOSFET supplied in?

The SI4686DY-T1-GE3 MOSFET is supplied in an 8-SOIC package.

What is the RoHS status of the SI4686DY-T1-GE3?

The SI4686DY-T1-GE3 is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the SI4686DY-T1-GE3?

The Moisture Sensitivity Level (MSL) for the SI4686DY-T1-GE3 is 1 Unlimited.

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