| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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12,500 pcs
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12500 pcs | On Request | 1 | On Request | On Request | 1803+ | On Request | On Request |
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The Vishay SI4686DY-T1-GE3 is a high-performance N-Channel MOSFET designed for various electronic applications. It features a maximum drain-source voltage (Vdss) of 30V and can handle a continuous current of 18.2A at the case temperature.
Key electrical characteristics include a low on-resistance (Rds On) of 9.5mOhm at 13.8A and 10V, and a gate charge (Qg) of 26nC at 10V. The gate threshold voltage (Vgs(th)) is 3V at 250µA, with a maximum gate-source voltage (Vgs) of ±20V.
This MOSFET operates within a wide temperature range of -55°C to 150°C (TJ). It is housed in a standard 8-SOIC package, suitable for surface mounting. The component's power dissipation is rated at 3W (ambient) or 5.2W (case).
This device is suitable for power management circuits, switching applications, and general-purpose amplification where efficient power control is required.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) for the SI4686DY-T1-GE3 is 30V.
The SI4686DY-T1-GE3 MOSFET has a continuous current rating of 18.2A.
The Rds On (Max) for the SI4686DY-T1-GE3 is 9.5mOhm at 13.8A and 10V.
The operating temperature range for the SI4686DY-T1-GE3 is -55°C to 150°C (TJ).
The SI4686DY-T1-GE3 MOSFET is supplied in an 8-SOIC package.
The SI4686DY-T1-GE3 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI4686DY-T1-GE3 is 1 Unlimited.