SI4563DY-T1-E3
Vishay
The Vishay Dale SI4563DY-T1-E3 is an N/P-Channel MOSFET with a 40V drain-to-source voltage and 8A continuous drain current. It is supplied in an 8-SOIC surface mount package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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361,600 pcs
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361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Input Capacitance (Ciss) (Max) @ Vds | |
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| Vgs(th) (Max) @ Id |
This Vishay Dale SI4563DY-T1-GE3 is a versatile N and P-channel MOSFET suitable for a wide range of electronic designs. It operates with a drain-source voltage of up to 40V and can handle a continuous current of 8A. The MOSFET offers a low on-resistance of 16mOhm at 5A and 10V, ensuring efficient power transfer.
Designed for surface mounting, the component comes in a standard 8-SOIC package. Its operating temperature range is from -55°C to 150°C (TJ), making it suitable for demanding environments. The MOSFET technology utilizes a Metal Oxide semiconductor structure.
Key electrical characteristics include a gate charge of 85nC and an input capacitance of 2390pF. The gate threshold voltage is a maximum of 2V at 250µA. This part is RoHS3 compliant and has a moisture sensitivity level of 1.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
40V.
8A.
16mOhm at 5A and 10V.
-55°C to 150°C junction.
8-SOIC surface mount package.
85nC at 10V.
2390pF at 20V.