SI4466DY-T1-E3
Vishay
The Vishay Dale SI4466DY-T1-E3 is an N-Channel MOSFET with a 20V drain-source voltage and 9.5A continuous current. It is supplied in an 8-SOIC package.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
301,000 pcs
|
301000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
107 pcs
|
107 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The SI4466DY-T1-GE3 is an N-Channel enhancement-mode MOSFET manufactured by Vishay Dale. It is designed for low-voltage power switching applications requiring efficient on-state performance. The device is rated for a maximum drain-to-source voltage of 20V and can handle a continuous drain current of 9.5A at 25°C ambient temperature.
Key electrical characteristics include a maximum on-resistance of 9mOhm at a gate drive voltage of 4.5V and a drain current of 13.5A. The gate threshold voltage is 1.4V maximum at 250µA drain current. The total gate charge is 60nC at 4.5V, enabling fast switching. The device is driven with a minimum recommended gate voltage of 2.5V and a maximum of 4.5V for optimal Rds(on) performance.
The MOSFET is housed in an 8-pin SOIC package (8SO), suitable for surface-mount assembly. Maximum power dissipation is 1.5W at 25°C ambient. This part is appropriate for load switching, DC-DC converter, and power management circuits in space-constrained designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-to-source voltage (Vdss) is 20V.
The continuous drain current (Id) is 9.5A at 25°C ambient temperature.
The maximum on-resistance (Rds on) is 9mOhm at Id=13.5A and Vgs=4.5V.
The maximum gate threshold voltage (Vgs(th)) is 1.4V at Id=250µA.
The maximum total gate charge (Qg) is 60nC at Vgs=4.5V.
The maximum power dissipation is 1.5W at 25°C ambient temperature.