SI4466DY-T1-GE3
Vishay
SI4466DY-T1-GE3 is an N-Channel MOSFET from Vishay Dale with a 20V drain-source voltage rating and 9.5A continuous drain current. It features a low 9mOhm on-resistance at 4.5V gate drive.
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157 pcs
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157 pcs | On Request | 1 | On Request | On Request | 0850+ | On Request | On Request |
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This N-Channel MOSFET from Vishay Dale, part number SI4466DY-T1-E3, is designed for various electronic applications. It features a maximum drain-source voltage of 20V and a continuous drain current of 9.5A at ambient temperature.
The MOSFET has a low on-resistance of 9mOhm at 13.5A and 4.5V gate-source voltage, with a gate charge of 60nC at 4.5V. The operating temperature range is from -55°C to 150°C (TJ).
Packaged in an 8-SOIC (0.154", 3.90mm Width) surface mount configuration, this component is suitable for space-constrained designs. It is specified with a maximum power dissipation of 1.5W at ambient temperature and meets RoHS3 compliance standards.
| Qty | Low | High |
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| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 20V.
The continuous drain current is 9.5A at ambient temperature.
The maximum on-resistance is 9mOhm at a drain current of 13.5A and gate-source voltage of 4.5V.
It comes in an 8-SOIC surface-mount package with a 3.90mm body width.
The operating junction temperature range is -55°C to 150°C.
The maximum gate threshold voltage is 1.4V at a drain current of 250µA.