| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
51 pcs
|
51 pcs | On Request | 1 | On Request | On Request | PFBAD | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type |
The Vishay Siliconix Si4436DY is an N-Channel Power MOSFET featuring TrenchFET technology, optimized for low-side synchronous rectifier applications. It provides a drain-source breakdown voltage of 60V and a low on-state resistance as low as 0.030 Ω at VGS = 10V and ID = 4.6A. The device is rated for a continuous drain current of up to 8A at TC = 25°C.
Key electrical characteristics include a gate-source threshold voltage typically around 2.5V and a gate-source leakage of ±100 nA maximum. Dynamic parameters include an input capacitance of 1100 pF typical and an output capacitance of 90 pF typical.
This MOSFET is housed in a SO-8 package and is suitable for surface mounting. It operates within a junction temperature range of -55°C to 150°C. The device is also halogen-free according to IEC 61249-2-21 definition.
Applications include CCFL inverters and other power switching circuits requiring efficient low-side rectification.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is 60V.
The typical gate-source threshold voltage is 2.5V.
The maximum on-state resistance is 0.036 Ohms at VGS = 10V and ID = 4.6A.
The maximum continuous drain current is 8A at TC = 25°C.
The Si4436DY is supplied in an SO-8 package.
The operating junction and storage temperature range is -55°C to 150°C.
Yes, the Si4436DY is halogen-free according to IEC 61249-2-21 definition.
