| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1,800 pcs
|
1800 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Input Capacitance | |
| Mounting Type | |
| Thermal Resistance |
The Infineon BSG0812ND is a dual asymmetric N-channel OptiMOS™5 MOSFET designed for high-performance buck converters. It offers a 20V drain-source breakdown voltage and a continuous drain current of up to 50A at 70°C case temperature with VGS=10V.
Key electrical characteristics include a low typical gate threshold voltage of 1.6V and low on-state resistance, with a maximum of 0.9 mΩ (Q2) at VGS=10V, ID=20A. The device supports logic-level gate drive (4.5V rated).
Packaged in a PG-TISON8-4 surface-mount package, the BSG0812ND is Pb-free and halogen-free, compliant with RoHS standards. It operates across a wide temperature range from -55°C to 150°C.
This MOSFET is optimized for applications requiring efficient power conversion, such as DC-DC converters and power management solutions.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum continuous drain current is 50A at 70°C case temperature with VGS=10V.
The drain-source breakdown voltage is 20V.
The typical gate threshold voltage is 1.6V.
The package type is PG-TISON8-4.
Yes, the BSG0812ND is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
Yes, the BSG0812ND is halogen-free.