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200,000 pcs
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200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| SVHC Present |
The Vishay Siliconix SI4401DY is a P-Channel MOSFET designed for various electronic applications. It features a Drain-Source Voltage (VDS) of -40V and is housed in a standard SO-8 package, suitable for surface mounting.
Key electrical characteristics include a typical Gate Threshold Voltage (VGS(th)) of -1V and a low typical Drain-Source On-State Resistance (rDS(on)) of 0.013Ω at VGS = -10V and ID = -10.5A. The continuous drain current (ID) is rated up to -10.5A at 25°C ambient temperature.
This MOSFET operates within a temperature range of -55°C to 150°C. Its thermal performance is supported by a typical junction-to-ambient thermal resistance (RthJA) of 70°C/W under steady-state conditions when surface mounted on an FR4 board.
The SI4401DY is suitable for applications requiring a reliable P-Channel MOSFET with specific voltage and current handling capabilities in a compact package.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is -40 V.
The SI4401DY comes in an SO-8 surface-mount package.
The operating temperature range is -55 to 150 °C.
The continuous drain current is -10.5 A at 25°C.
The typical on-resistance is 0.013 Ω at VGS = -10 V and ID = -10.5 A.
The gate threshold voltage is -1 V typical at ID = -250 µA.
The maximum power dissipation is 3 W at 25°C.