| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
200,000 pcs
|
200000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Lead Spacing | |
| Lead Style | |
| Mounting Type |
The Vishay Dale SI4384DY is an N-Channel MOSFET featuring TrenchFET Gen II technology, optimized for PWM applications. It boasts a low on-state resistance of 0.0085 Ohms at VGS = 10V and 15A continuous drain current.
With a drain-source voltage rating of 30V and a gate-source voltage range of ±20V, this MOSFET is suitable for high-side DC/DC conversion in notebooks, desktops, and servers. It is available in a compact SO-8 package and is surface-mounted.
Key electrical characteristics include a typical gate threshold voltage of 1.0V, a total gate charge of 12nC, and fast switching times with a turn-on delay of 10ns and turn-off delay of 45ns. The device is also 100% Rg tested for reliability.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage (Vds) for the SI4384DY is 30V.
The typical on-state resistance (Rds(on)) of the SI4384DY at VGS = 10V and ID = 15A is 0.0085 Ohms.
The SI4384DY MOSFET is supplied in an SO-8 package.
The SI4384DY is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the SI4384DY is 1.
Yes, the SI4384DY is Halogen-free.