| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
361,600 pcs
|
361600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type |
The Vishay Siliconix Si4143DY is a P-Channel TrenchFET® power MOSFET designed for applications such as adaptor switches, load switches, and power management in notebook computers.
Key electrical characteristics include a drain-source breakdown voltage of -30V and a maximum continuous drain current of -25.3A at a case temperature of 25°C. The on-resistance is as low as 0.0062 Ω at a gate-source voltage of -10V. The device also features a total gate charge of 54 nC typical.
This MOSFET is housed in an SO-8 package and is suitable for surface mounting. It operates within a junction and storage temperature range of -55°C to 150°C. The Si4143DY is tested 100% for Rg and UIS, ensuring reliability in demanding applications.
Material categorization indicates it is lead (Pb)-free and halogen-free, aligning with modern environmental standards.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Drain-Source Breakdown Voltage of the Si4143DY is -30V.
The maximum Continuous Drain Current for the Si4143DY is -25.3A at Tc = 25 °C.
The Gate-Source Voltage of the Si4143DY is ±25V.
The maximum power dissipation of the Si4143DY is 6W at Tc = 25 °C.
The operating junction and storage temperature range for the Si4143DY is -55 to 150 °C.
The Si4143DY is provided in an SO-8 package.
Yes, the Si4143DY is Lead Free.
