| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
241,067 pcs
|
241067 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Mounting Type | |
| SVHC Present |
The Vishay Siliconix Si3407DV is a P-Channel TrenchFET® Power MOSFET designed for applications such as load switching in notebook PCs. It offers a drain-source breakdown voltage of -20V and a low on-state resistance, with typical values of 0.0240 Ω at VGS = -4.5V and 0.0372 Ω at VGS = -2.5V.
This MOSFET is optimized for PWM applications and is 100% R g and UIS tested. It comes in a compact TSOP-6 package, suitable for surface mounting on FR4 boards. The device operates within a junction temperature range of -55°C to 150°C and is compliant with RoHS Directive 2002/95/EC and Halogen-free standards.
Key electrical characteristics include a continuous drain current of up to -8A (TC = 25°C) and a pulsed drain current of -25A. The thermal resistance from junction-to-ambient is typically 62.5°C/W under specific conditions, ensuring efficient heat dissipation for its size.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source breakdown voltage is -20V.
The gate-source threshold voltage is -0.65V.
The maximum continuous drain current is -8A.
The maximum power dissipation is 4.2W.
The operating junction and storage temperature range is -55°C to 150°C.
The SI3407DV is available in a TSOP-6 package.
Yes, the SI3407DV is halogen-free.