Mfr Part #:

SI2309CDS-T1-GE3

Name: SI2309CDS-T1-GE3
Brand: Vishay
SKU: SI2309CDS-T1-GE3
Availability: InStock

Mfr Name: Vishay

Description:

MOSFET P-CH 60V 1.6A SOT23-3

✓ Total Stock: 1,647,351 pcs

SI2309CDS-T1-GE3 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	1,000 pcs On Request	1000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	2,351 pcs On Request	2351 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Risen Electronics ✓ Non-Authorised Inventory information	1,644,000 pcs On Request	1644000 pcs	On Request	1	On Request	On Request	On Request	On Request	2026-02-16 21:33:16

Short technical summary and product information.

MOSFET P-CH 60V 1.6A SOT23-3

Mfr Standard Lead Time: 12 weeks (varies by distributor)

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

Same form/fit/function or matching attribute configuration across different manufacturers.

SI2309CDS-T1-E3

Vishay Siliconix

MOSFET P-CH 60V 1.6A SOT23-3

Category	Transistors - FETs, MOSFETs - Single
Manufacturer Name	Vishay
Current	1.6A (Tc)
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	4.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds	210 pF @ 30 V
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 150°C (TJ)
Power Dissipation (Max)	1W (Ta), 1.7W (Tc)
Rds On (Max) @ Id, Vgs	345mOhm @ 1.25A, 10V
Supplier Device Package	SOT-23-3 (TO-236)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	±20V
Vgs(th) (Max) @ Id	3V @ 250µA