| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
229,020 pcs
|
229020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
3,480 pcs
|
3480 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
124 pcs
|
124 pcs | On Request | 1 | On Request | On Request | 17+ | On Request | On Request | |
|
60 pcs
|
60 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Gate Charge (Qg) (Max) @ Vgs | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Supplier Package | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The Vishay Dale SI2309CDS-T1-E3 is a P-Channel MOSFET designed for various applications. It features a maximum drain-source voltage (Vds) of 60V and a continuous drain current of 1.6A at 25°C case temperature.
Key electrical characteristics include a maximum on-state resistance (Rds(on)) of 345mOhm at 1.25A and 10V gate-source voltage. The gate-source threshold voltage (Vgs(th)) is a maximum of 3V at 250µA. Input capacitance (Ciss) is 210pF at 30V, and gate charge (Qg) is 4.1nC at 4.5V.
This MOSFET operates within a temperature range of -55°C to 150°C. It has a maximum power dissipation of 1.7W when measured at the case temperature (Tc) of 25°C. The device utilizes TrenchFET technology.
The SI2309CDS-T1-E3 is supplied in a surface-mount TO-236-3, SC-59, SOT-23-3 package.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The SI2309CDS-T1-E3 is supplied in an SOT-23-3 surface-mount package, also compatible with TO-236-3 and SC-59 footprints.
The operating junction temperature range is -55°C to 150°C.
The maximum drain-to-source voltage (Vdss) is 60V.
The maximum drain-to-source on-resistance is 345 mOhm at 1.25A drain current and 10V gate-source voltage.
The maximum total gate charge is 4.1 nC at 4.5V gate-source voltage.
The maximum continuous drain current is 1.6A at a case temperature of 25°C.