SI2306DS-T1-E3 The Vishay Siliconix SI2306DS-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage of 30V and a continuous drain current of 3.5A.
Mfr Part #:

SI2306DS-T1-E3

Available from 3 distributors
Mfr Name: Vishay
Vishay
The Vishay Siliconix SI2306DS-T1-E3 is an N-Channel MOSFET designed for various electronic applications. It offers a maximum drain-source voltage of 30V and a continuous drain current of 3.5A.
✓ Total Stock: 729,215 pcs
$ Price Range: $2.81

SI2306DS-T1-E3 Available from 3 distributors

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✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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723,200 pcs
723200 pcs On Request 1 On Request On Request On Request On Request On Request
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6,000 pcs
6000 pcs On Request 1 On Request On Request On Request On Request On Request
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15 pcs
15 pcs On Request 1 On Request On Request 08+ On Request On Request

SI2306DS-T1-E3 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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SI2306DS-T1-E3 Description

Short technical summary and product information.

This Vishay Siliconix SI2306DS-T1-E3 is an N-Channel MOSFET housed in a SOT-23 package. It is designed for surface mount applications and features a maximum drain-source voltage of 30V and a continuous drain current of 3.5A. The on-resistance is specified at a maximum of 1.25 Ohms under specific test conditions (VGS @ ID = 2.5V @ 10A). The gate-source voltage is rated up to 5V.

 

This component is suitable for general-purpose switching and amplification tasks in electronic circuits. Its SOT-23 package makes it ideal for space-constrained designs. The MOSFET's electrical characteristics are detailed in the technical specifications, providing engineers with key parameters for circuit design and simulation.

SI2306DS-T1-E3 Quick Information

Product Type: MOSFET
Series: TrenchFET
Canonical Name: Vishay Siliconix SI2306DS-T1-E3 N-Channel MOSFET
Subcategory: N-Channel

SI2306DS-T1-E3 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

SI2306DS-T1-E3 Estimated Pricing

Qty Low High
1+ $2.81 $2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2306DS-T1-E3 Features

  • N-Channel MOSFET in SOT-23 package.
  • 30V maximum drain-source voltage.
  • 3.5A continuous drain current.
  • 1.25 Ohm maximum on-resistance.
  • Surface mountable design.

SI2306DS-T1-E3 Applications

  • General purpose switching applications.
  • Power management circuits.
  • Low voltage motor control.
  • Battery powered devices.

SI2306DS-T1-E3 FAQs

4 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage for the SI2306DS-T1-E3?

The maximum drain-source voltage is 30V.

What is the continuous drain current rating?

The continuous drain current is 3.5A.

What is the maximum on-resistance?

The maximum on-resistance is 1.25 Ohms.

What type of package is the SI2306DS-T1-E3 in?

It is in a SOT-23 package.

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