Mfr Part #:

SI2305DS

Mfr Name: Vishay

The Vishay Siliconix SI2305DS is a P-Channel MOSFET in a TO-236 package. It offers a drain-source voltage of -8V and a typical on-resistance of 0.044Ω.

✓ Total Stock: 790 pcs

$ Price Range: $2.81

SI2305DS Available from 2 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Braun Electronic Components ✓ Non-Authorised Inventory information	395 pcs On Request	395 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
MW.FEP S.p.A. ✓ Non-Authorised Inventory information	395 pcs On Request	395 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request

SI2305DS Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Vishay
Input Capacitance	1245 pF
Mounting Type	Surface Mount
Tape & Reel	Yes

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SI2305DS Description

Short technical summary and product information.

The Vishay Siliconix SI2305DS is a P-Channel MOSFET designed for various electronic applications. It features a drain-source voltage (VDS) of -8V and a gate-source voltage (VGS) of ±8V. The device exhibits a low typical drain-source on-resistance (rDS(on)) of 0.044Ω at VGS = -4.5V and ID = -3.5A, with a maximum power dissipation (PD) of 1.25W at 25°C.

This MOSFET is housed in a TO-236 (SOT-23) surface-mount package, making it suitable for space-constrained designs. Key electrical characteristics include a gate threshold voltage (VGS(th)) of -0.45V and a continuous drain current (ID) of up to 3.5A at 25°C. The operating junction and storage temperature range is from -55°C to 150°C.

With its P-Channel configuration and specific electrical parameters, the SI2305DS is well-suited for switching and amplification tasks in power management circuits, load switching, and general-purpose analog applications where a negative voltage swing is required.

SI2305DS Quick Information

Product Type: MOSFET

Series: SI2305

Canonical Name: Vishay Siliconix SI2305DS P-Channel MOSFET

Subcategory: P-Channel

SI2305DS Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

SI2305DS Estimated Pricing

Qty	Low	High
1+	$2.81	$2.81

Estimated market price range - modelled values for guidance only, not live distributor offers.

SI2305DS Features

P-Channel MOSFET in TO-236 package.
Maximum drain-source voltage of -8V.
Typical on-resistance of 0.044Ω at -4.5V.
Maximum power dissipation of 1.25W at 25°C.
Wide operating temperature range of -55°C to 150°C.

SI2305DS Applications

Suitable for P-Channel switching applications.
Ideal for load switching circuits.
Used in power management designs.
Applicable for general analog tasks.

SI2305DS FAQs

6 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source voltage for the SI2305DS?

The maximum drain-source voltage (VDS) for the SI2305DS is -8V.

What is the typical drain-source on-resistance (rDS(on)) of the SI2305DS?

The typical drain-source on-resistance (rDS(on)) is 0.044Ω when VGS is -4.5V and ID is -3.5A.

What is the maximum continuous drain current for the SI2305DS at 25°C?

The maximum continuous drain current (ID) at 25°C is 3.5A.

What is the maximum power dissipation of the SI2305DS at 25°C?

The maximum power dissipation (PD) at 25°C is 1.25W.

What is the operating temperature range for the SI2305DS?

The operating junction and storage temperature range is -55°C to 150°C.

What package type is the SI2305DS available in?

The SI2305DS is available in a TO-236 package.

SI2305DS Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.

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SI2305DS-T1

Vishay

The Vishay Siliconix SI2305DS-T1 is a P-Channel MOSFET designed for 1.8V rated applications. It features a TO-236 (SOT-23) package and a maximum continuous drain current of 3.5A.

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