| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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325 pcs
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325 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia SI2304DS,215 is an N-channel enhancement mode field-effect transistor utilizing TrenchMOS™ technology. It is supplied in a subminiature surface mount package, specifically the TO-236-3, SC-59, SOT-23-3 (TO-236AB).
Key electrical characteristics include a maximum drain-source voltage of 30V and a continuous drain current of 1.7A (Tc). The device exhibits a low on-state resistance, with a maximum of 117mOhm at 500mA and 10V Vgs. Input capacitance is rated at 195pF at 10V, and gate charge is 4.6nC at 10V.
This MOSFET operates within a temperature range of -65°C to 150°C (TJ) and has a maximum power dissipation of 830mW (Tc). Its features make it suitable for applications such as battery management, high-speed switching, and low-power DC to DC converters.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30V.
1.7A at 25°C case temperature.
830mW at 25°C case temperature.
117mOhm maximum at Id=500mA, Vgs=10V.
TO-236-3 (SC-59, SOT-23-3) surface-mount package.
-65°C to 150°C junction temperature.