| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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1,705 pcs
|
1705 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-21 06:15:16 | |
|
1,659 pcs
|
1659 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,253 pcs
|
1253 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
970 pcs
|
970 pcs | On Request | 1 | On Request | On Request | 23+ | On Request | On Request |
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The Vishay SI2301DS-T1 is a P-Channel MOSFET designed for various electronic applications. It offers a drain-source voltage (VDS) of -20V and a continuous drain current (ID) of up to -2.3A at 25℃.
Key electrical characteristics include a low on-resistance (RDS(on)) of 0.130Ω at VGS = -4.5V and 0.190Ω at VGS = -2.5V. The device can handle pulsed drain currents up to -10A and continuous source currents of -1.6A.
With a power dissipation of 1.25W at 25℃, the SI2301DS-T1 is suitable for applications requiring moderate power handling. It operates within a junction and storage temperature range of -55℃ to 150℃.
The MOSFET is housed in a compact SOT-23 surface-mount package, making it ideal for space-constrained designs. Its robust construction and reliable performance make it a suitable choice for general-purpose switching and amplification tasks.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.60 | $2.60 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-source voltage (VDS) is -20V.
The continuous drain current (ID) is -2.3A at 25℃ and -1.5A at 70℃.
The on-resistance (RDS(on)) is 0.130Ω at VGS = -4.5V and 0.190Ω at VGS = -2.5V.
The package type is SOT-23.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.