| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
695,385 pcs
|
695385 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Mounting Type | |
| SVHC Present |
The Vishay SI1965DH is a Dual P-Channel MOSFET with a drain-source voltage (VDS) of -12V. It is designed for applications such as load switching in portable devices. The MOSFET offers a maximum on-resistance (RDS(on)) of 0.390 Ω at a gate-source voltage (VGS) of -4.5V, and 0.535 Ω at VGS = -2.5V, and 0.710 Ω at VGS = -1.8V. The continuous drain current (ID) is rated at -1.3A at 25°C case temperature.
This device utilizes TrenchFET® power MOSFET technology. It is available in a compact SC-70 (SOT-363) 6-lead package, suitable for surface mounting. The operating junction and storage temperature range is from -55°C to +150°C. Thermal resistance ratings include a maximum junction-to-ambient of 170 °C/W and a maximum junction-to-foot of 100 °C/W.
Key electrical characteristics include a typical gate charge (Qg) of 1.7 nC. The absolute maximum ratings specify a gate-source voltage of ±8V and a pulsed drain current of -3A. The device is RoHS3 compliant.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.81 | $2.81 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-12 V
-1.3 A
0.390 Ω
SC70-6
-55 to +150 °C
