SCTH35N65G2V-7AG The SCTH35N65G2V-7AG is a 650V, 45A N-Channel Silicon Carbide FET from STMicroelectronics. It features a low on-resistance of 67mOhm and is housed in a surface-mount H2PAK-7 package.
Mfr Part #:

SCTH35N65G2V-7AG

Available from 3 distributors
Mfr Name: STMicroelectronics
STMicroelectronics
The SCTH35N65G2V-7AG is a 650V, 45A N-Channel Silicon Carbide FET from STMicroelectronics. It features a low on-resistance of 67mOhm and is housed in a surface-mount H2PAK-7 package.
✓ Total Stock: 5,868 pcs
$ Price Range: $0.99

SCTH35N65G2V-7AG Available from 3 distributors

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3,868 pcs
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1,000 pcs
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1,000 pcs
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SCTH35N65G2V-7AG Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id

SCTH35N65G2V-7AG Description

Short technical summary and product information.

The SCTH35N65G2V-7AG is an N-Channel Silicon Carbide (SiCFET) power transistor from STMicroelectronics. It is designed for high-voltage power switching applications with a drain-to-source voltage rating of 650V and a continuous drain current of 45A at 25°C. The device exhibits a maximum on-resistance of 67mOhm at 20A gate drive and a gate charge of 73nC, enabling efficient switching performance.

 

This SiCFET integrates advanced silicon carbide technology to deliver high efficiency and reliability in demanding environments. The operating temperature range spans from -55°C to 175°C, allowing use in extreme thermal conditions. The maximum power dissipation is 208W, and the input capacitance is 1370pF at 400V drain-source voltage.

 

The device is offered in a surface-mount H2PAK-7 package, which is equivalent to TO-263-8, D²Pak (7 leads + Tab), and TO-263CA. This package supports compact PCB layouts and efficient heat dissipation. The gate-source voltage maximum is +22V/-10V, and the threshold voltage is 3.2V at 1mA drain current.

SCTH35N65G2V-7AG Quick Information

Product Type: SiCFET (Silicon Carbide) Power Transistor
Canonical Name: SCTH35N65G2V-7AG N-Channel SiCFET Power Transistor
Subcategory: N-Channel MOSFETs

SCTH35N65G2V-7AG Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SCTH35N65G2V-7AG Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

SCTH35N65G2V-7AG Features

  • 650V drain-source voltage rating.
  • 45A continuous drain current capability.
  • Low on-resistance of 67mOhm at 20A.
  • SiCFET technology for high efficiency.
  • Surface-mount H2PAK-7 package.

SCTH35N65G2V-7AG Applications

  • High-voltage DC-DC converters.
  • Electric vehicle charging systems.
  • Industrial motor drives.
  • Renewable energy inverters.

SCTH35N65G2V-7AG FAQs

7 frequently asked questions generated from this part’s specifications.
What is the drain-source voltage rating of the SCTH35N65G2V-7AG?

The drain-source voltage rating is 650V.

What is the continuous drain current at 25°C?

The continuous drain current is 45A at 25°C.

What is the on-resistance (Rds(on)) of this device?

The maximum on-resistance is 67mOhm at 20A drain current and 20V gate-source voltage.

What is the operating temperature range?

The operating temperature range is -55°C to 175°C (junction temperature).

What package is the SCTH35N65G2V-7AG available in?

The device is available in a surface-mount H2PAK-7 package, which is equivalent to TO-263-8, D²Pak (7 leads + Tab), and TO-263CA.

What is the total gate charge?

The maximum total gate charge is 73nC at 20V gate-source voltage.

What is the input capacitance?

The maximum input capacitance is 1370pF at 400V drain-source voltage.

SCTH35N65G2V-7AG Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
View All Alternate Parts
SCTH35N65G2V-7
SCTH35N65G2V-7
STMicroelectronics
SICFET N-CH 650V 45A H2PAK-7
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