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SCTH35N65G2V-7 SICFET N-CH 650V 45A H2PAK-7
Mfr Part #:

SCTH35N65G2V-7

Mfr Name: STMicroelectronics
STMicroelectronics
SICFET N-CH 650V 45A H2PAK-7
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SCTH35N65G2V-7 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Supplier Device Package
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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SCTH35N65G2V-7 Description

Short technical summary and product information.
SICFET N-CH 650V 45A H2PAK-7

SCTH35N65G2V-7 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

SCTH35N65G2V-7 Alternate Parts

Same form/fit/function or matching attribute configuration across different manufacturers.
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SCTH35N65G2V-7AG
SCTH35N65G2V-7AG
STMicroelectronics
The SCTH35N65G2V-7AG is a 650V, 45A N-Channel Silicon Carbide FET from STMicroelectronics. It features a low on-resistance of 67mOhm and is housed in a surface-mount H2PAK-7 package.
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