IPD50N06S4L-12
Infineon
The Infineon IPD50N06S4L-12 is an N-channel Power MOSFET designed for automotive applications. It offers a 60V drain-source breakdown voltage and a continuous drain current of up to 50A.
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2,985 pcs
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2985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Sanyo Denki SB0509V-TL-E is a Schottky Barrier Diode designed for various electronic applications. It offers a reverse voltage rating of 90V and an average rectified current of 0.5A, making it suitable for power rectification tasks.
Key electrical characteristics include a reverse recovery time of 20ns, indicating fast switching performance. The diode is packaged in an SMD/SMT format for surface mount assembly, requiring a surface mount type installation.
This component is manufactured by Sanyo Denki and is identified by the part number SB0509V-TL-E. Its specifications make it a reliable choice for designers needing efficient rectification in compact applications.
| Qty | Low | High |
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| 1+ | $2.00 | $2.00 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The reverse voltage of the SB0509V-TL-E is 90V.
The average rectified current (Io) for the SB0509V-TL-E is 0.5A.
The reverse recovery time is 20ns.
The SB0509V-TL-E is in an SMD/SMT package and is designed for surface mounting.
