Mfr Part #:

IPD50N06S4L-12

Mfr Name: Infineon

The Infineon IPD50N06S4L-12 is an N-channel Power MOSFET designed for automotive applications. It offers a 60V drain-source breakdown voltage and a continuous drain current of up to 50A.

✓ Total Stock: 9,199 pcs

$ Price Range: $0.99

IPD50N06S4L-12 Available from 3 distributors

✓ Authorised

✓ Non-Authorised

Distributor		Stock	Pricing	MOQ	PKG	Lead Time	Date Code	On Order Quantity	On Order Delivery
Risen Electronics ✓ Non-Authorised Inventory information	4,000 pcs On Request	4000 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Xingangxin ✓ Non-Authorised Inventory information	2,774 pcs On Request	2774 pcs	On Request	1	On Request	On Request	On Request	On Request	On Request
Optech Co.,Limited ✓ Non-Authorised Inventory information	2,425 pcs On Request	2425 pcs	On Request	1	On Request	On Request	21+	On Request	On Request

IPD50N06S4L-12 Specifications Quick View

Most important parameters for selection – full specs in datasheet.

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Category	New Products
Manufacturer Name	Infineon
Mounting Type	Surface Mount
Power Dissipation	50 W
Reverse Recovery Time	20 ns

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IPD50N06S4L-12 Description

Short technical summary and product information.

The Infineon IPD50N06S4L-12 is an OptiMOS®-T2 Power MOSFET featuring an N-channel enhancement mode configuration. This component is AEC Q101 qualified and rated for a maximum operating temperature of 175°C, with MSL1 up to 260°C peak reflow.

Key electrical characteristics include a drain-source breakdown voltage of 60V and a low on-state resistance, with a maximum of 12 mΩ at VGS=10V and ID=50A. The continuous drain current is 50A at 25°C case temperature and 36A at 100°C case temperature. It also features a pulsed drain current of 200A and a single pulse avalanche energy of 33 mJ.

Dynamic characteristics include input capacitance (Ciss) up to 2890 pF and output capacitance (Coss) up to 700 pF. The device is supplied in a PG-TO252-3-11 package, suitable for surface mounting.

This MOSFET is a green product, compliant with RoHS standards, and has undergone 100% avalanche testing. Its specifications make it suitable for various automotive control applications.

IPD50N06S4L-12 Quick Information

Product Type: N-channel Power MOSFET

Canonical Name: Infineon IPD50N06S4L-12 N-channel Power MOSFET

Subcategory: N-Channel

IPD50N06S4L-12 Compliance

RoHS Status: RoHS Compliant

Moisture Sensitivity Level (MSL): 1 Unlimited

REACH Status: REACH Unaffected

IPD50N06S4L-12 Estimated Pricing

Qty	Low	High
1+	$0.99	$0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

IPD50N06S4L-12 Features

N-channel enhancement mode MOSFET.
AEC Q101 qualified for automotive use.
60V drain-source breakdown voltage.
Low 12mΩ on-state resistance.
175°C maximum operating temperature.

IPD50N06S4L-12 Applications

Used in automotive power management systems.
Suitable for DC-DC converters in vehicles.
Ideal for motor control in automotive applications.
Used in automotive battery protection circuits.

IPD50N06S4L-12 FAQs

7 frequently asked questions generated from this part’s specifications.

What is the maximum drain-source breakdown voltage for the IPD50N06S4L-12?

The drain-source breakdown voltage is 60V.

What is the typical gate threshold voltage of the IPD50N06S4L-12?

The typical gate threshold voltage is 1.7V.

What is the maximum on-state resistance (RDS(on)) for the IPD50N06S4L-12?

The maximum on-state resistance is 12 mΩ at VGS=10V and ID=50A.

What is the continuous drain current rating for the IPD50N06S4L-12?

The continuous drain current is 50A at 25°C case temperature and 36A at 100°C case temperature.

What is the operating temperature range for the IPD50N06S4L-12?

The operating and storage temperature range is -55°C to +175°C.

What package type is the IPD50N06S4L-12 supplied in?

The IPD50N06S4L-12 is supplied in the PG-TO252-3-11 package.

Is the IPD50N06S4L-12 RoHS compliant?

Yes, the RoHS status is RoHS3 Compliant.