S29GL256P10TFI010
Cypress Semiconductor
The Cypress Semiconductor S29GL256P10TFI010 is a 3V page flash memory device. It offers fast access times and a write buffer for efficient programming.
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17 pcs
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17 pcs | On Request | 1 | On Request | On Request | N/A | On Request | On Request |
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The Infineon Technologies S29GL256P11TFI020 is a high-performance Parallel Flash Memory device with a density of 256 Megabits. Fabricated using the advanced 90nm MirrorBit process technology, this memory offers a fast page access time of 25 ns and a random access time as fast as 90 ns. It operates from a single 3V supply (2.7-3.6 V) and features an enhanced VersatileI/O control.
A key feature is the 32-word/64-byte write buffer, which significantly reduces overall programming time by allowing multiple words to be programmed in a single operation. This makes the S29GL256P11TFI020 ideal for embedded applications demanding higher density, superior performance, and lower power consumption.
The device supports a uniform 64 Kword/128 Kbyte sector architecture and offers typical data retention of 20 years with 100,000 erase cycles per sector. It is available in 56-pin TSOP and 64-ball Fortified BGA packages, suitable for surface mount applications.
Additional features include Suspend and Resume commands for program and erase operations, write operation status bits, an Unlock Bypass Program command, and support for CFI (Common Flash Interface). The Secured Silicon Sector region provides permanent, secure identification.
The datasheet indicates a density of 256 Megabits for this part family.
The S29GL256P11TFI020 utilizes 90nm MirrorBit process technology.
The device supports a single 3V read/program/erase operation within a 2.7V to 3.6V range. The VIO input determines input levels and outputs, with a range of 1.65V to VCC.
The page access time is 25 ns under regulated VCC conditions.
The random access time is as fast as 90 ns under regulated VCC conditions.
The device features a write buffer that allows up to 32 words or 64 bytes to be programmed in one operation.
The typical data retention is 20 years.