DistyParts Icon
S29GL256P10TFI010 The Cypress Semiconductor S29GL256P10TFI010 is a 3V page flash memory device. It offers fast access times and a write buffer for efficient programming.
Mfr Part #:

S29GL256P10TFI010

Available from 1 distributors
Mfr Name: Cypress Semiconductor
Cypress Semiconductor
The Cypress Semiconductor S29GL256P10TFI010 is a 3V page flash memory device. It offers fast access times and a write buffer for efficient programming.
✓ Total Stock: 1,794 pcs

S29GL256P10TFI010 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Xingangxin ✓
Non-Authorised Inventory information
1,794 pcs
On Request
1794 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

S29GL256P10TFI010 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Halogen Free
Industrial Grade
Interface
Lead Spacing
Lead Style
Memory Type
Mounting Type
Package / Case
Voltage Supply
View Similar Products (0)

S29GL256P10TFI010 Description

Short technical summary and product information.

The Cypress Semiconductor S29GL256P10TFI010 is a 3V page flash memory built on 90nm MirrorBit process technology. It provides a fast page access time of 25 ns and a random access time as fast as 90 ns. This device features a write buffer that allows up to 64 bytes to be programmed in a single operation, significantly reducing programming time for multiple-word updates.

 

With a uniform 64 Kword/128 Kbyte sector architecture, the S29GL256P10TFI010 is suitable for embedded applications requiring high density, performance, and lower power consumption. It is offered in 56-pin TSOP and 64-ball Fortified BGA packages, supporting surface mount installation.

 

Key characteristics include a single 3V read/program/erase capability (2.7-3.6 V) and enhanced VersatileI/O control. The memory offers typical data retention of 20 years and 100,000 erase cycles per sector.

S29GL256P10TFI010 Quick Information

Product Type: Flash Memory
Series: S29GL
Canonical Name: Cypress Semiconductor S29GL256P10TFI010 3V Page Flash Memory
Subcategory: Flash Memory

S29GL256P10TFI010 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: No

S29GL256P10TFI010 Features

  • 3V page flash memory device.
  • Fast 25ns page access time.
  • 90ns random access time.
  • 64-byte write buffer for efficient programming.
  • Offered in TSOP and BGA packages.

S29GL256P10TFI010 Applications

  • For code storage in embedded systems.
  • Used in automotive electronics.
  • For industrial control applications.
  • In networking equipment firmware.
  • For consumer electronics boot memory.

S29GL256P10TFI010 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the memory type of the S29GL256P10TFI010?

The S29GL256P10TFI010 is a parallel NOR flash memory.

What is the supply voltage range?

The device operates from a single 3V supply with a range of 2.7V to 3.6V.

What is the random access time?

The maximum random access time is 90ns.

What is the page access time?

The maximum page access time is 25ns.

What is the sector architecture?

The device has uniform 64Kword/128Kbyte sectors.

What is the erase endurance?

The device offers 100,000 erase cycles per sector typical.

What is the data retention period?

20 years.

Home

Categories