| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,505 pcs
|
2505 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Halogen Free | |
| Memory Type | |
| Mounting Type | |
| Package / Case |
The Spansion S29GL256P10FFI020 is a 3V page flash memory built on 90nm MirrorBit process technology. This device provides a fast page access time of 25 ns and a random access time as fast as 90 ns. It includes a 32-word/64-byte write buffer, which significantly reduces programming time for multiple-word updates, making it suitable for embedded applications demanding high density and performance.
The memory features a uniform 64 Kword/128 Kbyte sector architecture and offers 100,000 erase cycles per sector typical, with 20-year data retention typical. It supports single 3V read/program/erase operations within a 2.7-3.6 V range and features enhanced VersatileI/O control. The device is available in 56-pin TSOP and 64-ball Fortified BGA packages, supporting surface mount installation.
Key characteristics include Suspend and Resume commands for program and erase operations, write operation status bits, an Unlock Bypass Program command, and support for CFI (Common Flash Interface). It also includes Persistent and Password methods for Advanced Sector Protection, along with WP#/ACC and Hardware reset inputs.
The VCC supply voltage range is 2.7V to 3.6V. The VIO range is 1.65V to VCC.
Page access time is 25ns maximum; random access time is 90ns maximum.
The memory uses uniform 64 Kword/128 Kbyte sectors.
It offers 100,000 erase cycles per sector typical.
Typical data retention is 20 years.
The device is available in 56-TSOP and 64-BGA packages.