| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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6,987 pcs
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6987 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Halogen Free | |
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The Cypress S29GL01GP/512/256/128P are Mirrorbit® Flash products fabricated on 90 nm process technology. These devices offer a fast page access time of 25 ns with a corresponding random access time as fast as 90 ns. They feature a Write Buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. This makes these devices ideal for today’s embedded applications that require higher density, better performance and lower power consumption.
The S29GL01GP11FAIR10 specifically offers a density of 128 Mbit and operates within a voltage range of 2.7V to 3.6V. It supports a uniform 128 Kbyte sector architecture and provides typical data retention of 20 years with 100,000 erase cycles per sector.
Offered in a 56-pin TSOP or 64-ball Fortified BGA package, this Flash memory is designed for surface mount applications. It includes features like Suspend and Resume commands for Program and Erase operations, and a Ready/Busy# output for monitoring cycle completion.
The density of the S29GL01GP11FAIR10 is 128 Mbit.
The operating voltage range for read, program, and erase operations is 2.7V to 3.6V.
The page access time is a maximum of 25 ns.
The random access time is as fast as 90 ns.
The write buffer size is 32 words or 64 bytes.
The typical data retention period is 20 years.
This part is offered in a 56-pin TSOP and a 64-ball Fortified BGA package.