| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,000,000 pcs
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2000000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba RN1421 is a general-purpose NPN bipolar junction transistor (BJT) suitable for switching applications. It is housed in a small outline package, specifically the TO-236MOD, SC-59, or S-MINI variant, designed for surface mounting.
Key electrical characteristics include a maximum collector current of 0.8 A and a maximum collector-emitter voltage of 50 V. The transistor offers a minimum DC current gain (hFE) of 60 and a nominal transition frequency (fT) of 300 MHz. The maximum power dissipation in ambient conditions is rated at 0.2 W.
This component is configured as a single element with built-in resistors, simplifying circuit design. The gull wing termination style facilitates surface mounting. The plastic/epoxy package material ensures durability in typical operating environments.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.05 | $0.05 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (IC) for the RN1421 is 0.8 A.
The RN1421 has a maximum collector-emitter voltage (Vce) of 50 V.
The minimum DC current gain (hFE) for the RN1421 is 60.
The nominal transition frequency (fT) for the RN1421 is 300 MHz.
The RN1421 is available in a surface mount package, specifically TO-236MOD, SC-59, or S-MINI.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
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