| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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401,778 pcs
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401778 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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1SS272 is a silicon rectifier diode manufactured by Toshiba. It contains two separate rectifier elements in one SC-61 small outline package, designed for general purpose use in compact electronic circuits.
The diode is rated for a maximum repetitive peak reverse voltage of 85 V and a maximum forward voltage of 1.2 V. It carries a maximum output current of 0.1 A and can withstand non-repetitive peak forward current of 2 A. Reverse recovery time is 4 ns, and reverse leakage current is 0.5 µA at 80 V. Power dissipation is limited to 0.225 W, with a maximum operating temperature of 125 °C.
The SC-61 package uses a plastic epoxy body with rectangular outline and gull-wing terminals for surface mounting. The component has four terminals and supports two independent rectifier channels. The part has an active lifecycle and carries ECCN code EAR99.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum repetitive peak reverse voltage is 85 V.
The maximum output current is 0.1 A, with a non-repetitive peak forward current of 2 A.
The maximum forward voltage is 1.2 V.
The maximum reverse recovery time is 4 ns (0.004 µs).
The 1SS272 is offered in an SC-61 small outline package with 4 gull-wing terminals and surface mount configuration.
The 1SS272 contains two separate silicon rectifier elements.
The maximum operating temperature is 125 °C.