| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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24 pcs
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24 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The RFD8P05 is a P-Channel Power MOSFET manufactured by Harris Semiconductor using the MegaFET process. This process optimizes silicon utilization for outstanding performance, making it suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. It can be operated directly from integrated circuits.
Key electrical specifications include a drain-to-source voltage (V DSS) of -50V, a continuous drain current (I D) of -8A, and a pulsed drain current (I DM) of -20A. The on-resistance (R DS(ON)) is typically 0.300 Ohms. The gate-to-source voltage (V GS) is rated at ±20V.
Maximum power dissipation (P D) is 48W at 25°C, with a dissipation derating factor of 0.27W/°C. The operating and storage temperature range is -55°C to 175°C.
Available in TO-251AA, TO-252AA, and TO-220AB packages, this MOSFET is designed for efficient power management in various electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (V DSS) for the RFD8P05 is -50V.
The continuous drain current (I D) for the RFD8P05 is -8A.
The typical on-resistance (R DS(ON)) of the RFD8P05 is 0.300 Ohms.
The RFD8P05 is available in TO-251AA, TO-252AA, and TO-220AB packages.
The operating temperature range for the RFD8P05 is -55°C to 175°C.