RFD8P05 The RFD8P05 is a P-Channel Power MOSFET from Harris Semiconductor, designed for applications like switching regulators and motor drivers. It features a 50V drain-source voltage and 8A continuous drain current.
Mfr Part #:

RFD8P05

Available from 2 distributors
Mfr Name: Harris Semiconductor
Harris Semiconductor
The RFD8P05 is a P-Channel Power MOSFET from Harris Semiconductor, designed for applications like switching regulators and motor drivers. It features a 50V drain-source voltage and 8A continuous drain current.
✓ Total Stock: 25 pcs
$ Price Range: $2.54

RFD8P05 Available from 2 distributors

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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24 pcs
24 pcs On Request 1 On Request On Request On Request On Request On Request
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1 pcs
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RFD8P05 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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RFD8P05 Description

Short technical summary and product information.

The RFD8P05 is a P-Channel Power MOSFET manufactured by Harris Semiconductor using the MegaFET process. This process optimizes silicon utilization for outstanding performance, making it suitable for applications such as switching regulators, switching converters, motor drivers, and relay drivers. It can be operated directly from integrated circuits.

 

Key electrical specifications include a drain-to-source voltage (V DSS) of -50V, a continuous drain current (I D) of -8A, and a pulsed drain current (I DM) of -20A. The on-resistance (R DS(ON)) is typically 0.300 Ohms. The gate-to-source voltage (V GS) is rated at ±20V.

 

Maximum power dissipation (P D) is 48W at 25°C, with a dissipation derating factor of 0.27W/°C. The operating and storage temperature range is -55°C to 175°C.

 

Available in TO-251AA, TO-252AA, and TO-220AB packages, this MOSFET is designed for efficient power management in various electronic systems.

RFD8P05 Quick Information

Product Type: MOSFET
Canonical Name: P-Channel Power MOSFET
Subcategory: Power MOSFET

RFD8P05 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

RFD8P05 Estimated Pricing

Qty Low High
1+ $2.54 $2.54

Estimated market price range - modelled values for guidance only, not live distributor offers.

RFD8P05 Features

  • P-Channel Power MOSFET with MegaFET process.
  • 50V drain-to-source voltage rating.
  • 8A continuous drain current capability.
  • 0.300 Ohm typical on-resistance.
  • Wide operating temperature range.

RFD8P05 Applications

  • Suitable for switching regulators.
  • Used in switching converters.
  • Ideal for motor drivers.
  • Applicable for relay drivers.

RFD8P05 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the drain-to-source voltage for the RFD8P05?

The drain-to-source voltage (V DSS) for the RFD8P05 is -50V.

What is the continuous drain current of the RFD8P05?

The continuous drain current (I D) for the RFD8P05 is -8A.

What is the typical on-resistance of the RFD8P05?

The typical on-resistance (R DS(ON)) of the RFD8P05 is 0.300 Ohms.

What are the available package types for the RFD8P05?

The RFD8P05 is available in TO-251AA, TO-252AA, and TO-220AB packages.

What is the operating temperature range for the RFD8P05?

The operating temperature range for the RFD8P05 is -55°C to 175°C.

RFD8P05 Alternate Parts

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Infineon Technologies
The Infineon Technologies IPB035N10NF2SATMA1 is an N-channel MOSFET designed for power applications. It features a 100V drain-source voltage and 75A continuous drain current.
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