| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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685 pcs
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685 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-02-16 21:33:16 |
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| Manufacturer Name | |
| Halogen Free | |
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| Supplier Device Package |
The Infineon Technologies IPB035N10NF2SATMA1 is an N-channel MOSFET with a maximum drain-source voltage of 100V and a continuous drain current of 75A at 25°C. Its low on-resistance is 3.5 mOhm at Vgs=10V and Id=75A. The gate threshold voltage is typically 2.5V. This MOSFET is housed in a TO-263 (D2Pak) package and is designed for surface mounting. It operates within a temperature range of -55°C to 175°C.
Key electrical characteristics include a typical total gate charge of 55 nC, input capacitance of 1600 pF, output capacitance of 350 pF, and reverse transfer capacitance of 150 pF. Typical rise and fall times are 15 ns and 10 ns, respectively, with a reverse recovery time of 30 ns. The power dissipation is rated at 303W at 25°C.
This component is suitable for various power switching applications where high current and voltage handling are required. Its surface mount package facilitates integration into compact designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $3.20 | $3.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 100 V.
It is available in a TO-263 (D2Pak) surface-mount package.
The operating junction temperature range is -55 to 175°C.
The continuous drain current is 75 A at a case temperature of 25°C.
The maximum on-resistance is 3.5 mOhm at Vgs=10V and Id=75A.
The typical total gate charge is 55 nC at Vds=50V and Id=75A.
Typical rise time is 15 ns and fall time is 10 ns at Vgs=10V and Id=75A.