| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,000 pcs
|
3000 pcs | On Request | 1 | On Request | On Request | 19+ | On Request | On Request | |
|
7 pcs
|
7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Diode Capacitance | |
| Forward Current | |
| Forward Voltage | |
| Junction Temperature | |
| Mounting Type | |
| Pitch | |
| Reverse Current | |
| Reverse Voltage | |
| Storage Temperature |
The Nexperia USA Inc. RB751V40 is a planar Schottky barrier diode designed with an integrated guard ring for stress protection. It is housed in a compact SOD323 (SC-76) surface-mounted device (SMD) plastic package.
Key electrical characteristics include a low forward voltage of 370 mV at 1 mA and a repetitive peak reverse voltage of 40 V. The diode also features low capacitance, making it suitable for high-speed switching applications. Its typical forward current is rated up to 120 mA.
Applications for the RB751V40 include ultra high-speed switching, voltage clamping, line termination, and reverse polarity protection. The device operates within a junction temperature range of -65 °C to 150 °C and has a thermal resistance of 450 K/W from junction to ambient.
The component is supplied in a SOD323 package with a body size of 1.7 mm x 1.25 mm x 0.95 mm and a lead pitch of 1.3 mm. It is designed for surface mounting.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum forward current for the RB751V40 is 120 mA.
The repetitive peak reverse voltage of the RB751V40 is 40 V.
The typical forward voltage at 1 mA for the RB751V40 is 370 mV.
The RB751V40 is available in the SOD323 package.
The RB751V40 is used for ultra high-speed switching, voltage clamping, line termination, and reverse polarity protection.