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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,020 pcs
|
2020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature (Tamb) | |
| Collector-Base Cut-off Current (Icbo) | |
| Collector-Base Voltage (VCBO) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Emitter-Base Cut-off Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Frequency | |
| IC (Maximum) | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current (IBM) | |
| Peak Collector Current (ICM) | |
| Power | |
| Ptot (Maximum @ Tamb = 25 °C [1]) | |
| Storage Temperature (Tstg) | |
| Supplier Device Package | |
| Transistor Type | |
| VCEO (Maximum @ Open base) | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage | |
| hFE (Minimum @ VCE = -10 V; IC = -1 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C) | |
| hFE (Minimum @ VCE = -10 V; IC = -10 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C) | |
| hFE (Minimum @ VCE = -10 V; IC = -30 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02; Tamb = 25 °C) |
The Nexperia PZTA92,115 is a PNP high-voltage transistor suitable for applications in video equipment, telephony, and professional communication systems. This device features a maximum collector-emitter voltage (VCEO) of 300V and a maximum collector current (IC) of 100mA.
With a total power dissipation of 1.2W at 25°C ambient temperature, the PZTA92,115 is designed for reliable performance. It offers a minimum DC current gain (hFE) of 25 at 30mA and 10V. The transistor operates within a junction temperature range of -65°C to 150°C.
The component is packaged in a SOT-223 (SC-73) surface-mounted device (SMD) plastic package, which includes an increased heatsink. The package has 4 leads with a 2.3mm pitch and dimensions of 6.5mm x 3.5mm x 1.65mm. Its NPN complement is the PZTA42.
Key electrical characteristics include a collector-base voltage (VCBO) of 300V and an emitter-base voltage (VEBO) of 5V. The device also specifies a collector-emitter saturation voltage (VCEsat) of 500mV at 2mA collector current and 20mA base current.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PZTA92,115 is 300V.
The maximum collector current (IC) for the PZTA92,115 is 100mA.
The total power dissipation (Ptot) for the PZTA92,115 is 1.2W at 25°C ambient temperature.
The PZTA92,115 transistor is supplied in a SOT-223 surface-mount package.
The operating temperature range for the PZTA92,115 is -65°C to 150°C.
The minimum DC current gain (hFE) for the PZTA92,115 is 25 at 30mA collector current and 10V collector-emitter voltage.