Ready to onboard?
Are you ready to join DistyParts and
grow your business?
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,020 pcs
|
8020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Ambient Temperature | |
| Base-Emitter Saturation Voltage (Vbe Sat) | |
| Collector Current (IC) (Maximum) | |
| Collector Emitter Saturation Voltage Vcesat (Maximum @ IC = 20 mA; IB = 2 mA; Tamb = 25 °C) | |
| Collector-Base Cut-off Current (Icbo) | |
| Collector-Base Voltage (VCBO) | |
| Collector-Emitter Voltage (VCEO) (Maximum @ Open base) | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| DC Current Gain Hfe (Minimum @ VCE = 10 V; IC = 1 mA; Tamb = 25 °C) | |
| DC Current Gain Hfe (Minimum @ VCE = 10 V; IC = 10 mA; Tamb = 25 °C) | |
| DC Current Gain Hfe (Minimum @ VCE = 10 V; IC = 30 mA; Tamb = 25 °C) | |
| Emitter-Base Cut-off Current (Iebo) | |
| Emitter-Base Voltage (VEBO) | |
| Feedback Capacitance (Cre) | |
| Frequency | |
| Junction Temperature (TJ) | |
| Mounting Type | |
| Operating Temperature | |
| Peak Base Current (IBM) | |
| Peak Collector Current (ICM) | |
| Power | |
| Storage Temperature | |
| Supplier Device Package | |
| Thermal Resistance (Rth(j-a)) | |
| Thermal Resistance (Rth(j-sp)) | |
| Total Power Dissipation (Ptot) | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The Nexperia PZTA42,115 is an NPN high-voltage transistor housed in a SOT-223 surface-mounted device (SMD) plastic package. This transistor is designed for applications requiring high voltage capabilities, featuring a maximum collector-emitter voltage (VCEO) of 300V and a maximum collector current (IC) of 100mA.
Key electrical characteristics include a DC current gain (hFE) of at least 25 at 1mA/10V, and a collector-emitter saturation voltage (VCEsat) of 500mV maximum at 2mA/20mA. The device also has a feedback capacitance (Cre) of 3pF maximum at 1MHz.
With a total power dissipation of 1.2W at 25°C ambient temperature and a junction temperature up to 150°C, the PZTA42,115 is suitable for various electronic circuits. Its PNP complement is the PZTA92.
The transistor is supplied in a SOT-223 package, which is a surface-mount type. The operating temperature range is from -65°C to 150°C.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.48 | $0.48 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the PZTA42,115 is 300V.
The maximum collector current (IC) for the PZTA42,115 is 100mA.
The minimum DC current gain (hFE) is 25 at 1mA collector current and 10V collector-emitter voltage.
The total power dissipation (Ptot) is 1.2W at 25°C ambient temperature.
The PZTA42,115 is supplied in a SOT-223 surface-mount package.
The operating temperature range for the PZTA42,115 is -65°C to 150°C.