| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
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5000 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Conflict Minerals | |
| Power Dissipation | |
| SVHC Present | |
| Storage Temperature | |
| Tape & Reel |
The PZT5551 is a high voltage switching transistor from Nexperia USA Inc., designed for various electronic applications. This NPN silicon transistor features a high collector-emitter voltage rating of 160V and a maximum collector current of 600mA.
Key electrical characteristics include a minimum DC current gain (hFE) of 80 at 1mA and up to 400 at 10mA. The collector-emitter saturation voltage (VCE(SAT)) is typically low, at 0.15V for 10mA and 0.2V for 50mA collector current, facilitating efficient switching.
The transistor is housed in a SOT-223 package, suitable for surface mounting. Its operating junction temperature ranges from -65°C to +150°C, and it has a typical junction-to-ambient thermal resistance of 62.5°C/W.
This component is suitable for high voltage switching applications where reliability and performance are critical.
The collector-emitter breakdown voltage is 160V minimum at IC=1mA.
The PZT5551 is available in a SOT-223 surface-mount package.
The maximum operating junction temperature is 150°C, with a storage temperature range of -65°C to +150°C.
The DC current gain (hFE) ranges from 80 to 400 at VCE=5V and IC=10mA.
The maximum power dissipation is 2W.
The current gain bandwidth product (fT) is between 100MHz and 300MHz at VCE=10V, IC=10mA.