BZX84C13-V
Vishay
The Vishay Dale BZX84C13-V is a small signal Zener diode with a nominal voltage of 13V. It features a power dissipation of 300mW and comes in a SOT-23 package.
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4,807 pcs
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4807 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,962 pcs
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2962 pcs | On Request | 1 | On Request | On Request | 11+ | On Request | On Request | |
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507 pcs
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507 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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500 pcs
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500 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The PZT2907A is a PNP bipolar junction transistor (BJT) manufactured by NXP Semiconductors. It is housed in a SOT-223 plastic package, suitable for surface mount applications.
This transistor is designed for both switching and linear amplification tasks. It offers a high collector current capability of up to 600 mA and a maximum collector-emitter voltage of 60 V. The device also has a maximum collector-base voltage of 60 V and a maximum emitter-base voltage of 5 V.
Key electrical characteristics include a maximum power dissipation of 1.15 W at 25 °C ambient temperature. The operating and storage temperatures range from -65 °C to +150 °C. The thermal resistance from junction to ambient is 106 K/W when mounted on a standard printed-circuit board.
The NPN complement to the PZT2907A is the PZT2222A. This transistor is a reliable component for various electronic circuits requiring signal amplification or switching functions.
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| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current (DC) for the PZT2907A is 600 mA.
The maximum collector-emitter voltage for the PZT2907A is 60 V.
The PZT2907A is supplied in a SOT-223 plastic package.
The operating ambient temperature for the PZT2907A ranges from -65 °C to +150 °C.