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PXP8R3-20QXJ The Nexperia PXP8R3-20QXJ is a P-channel Trench MOSFET designed for various applications. It features a 20V drain-source voltage and a low on-state resistance.
Mfr Part #:

PXP8R3-20QXJ

Available from 1 distributors
Mfr Name: Nexperia USA Inc.
Nexperia USA Inc.
The Nexperia PXP8R3-20QXJ is a P-channel Trench MOSFET designed for various applications. It features a 20V drain-source voltage and a low on-state resistance.
✓ Total Stock: 7,020 pcs
$ Price Range: $2.27

PXP8R3-20QXJ Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Optech Co.,Limited ✓
Non-Authorised Inventory information
7,020 pcs
On Request
7020 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

PXP8R3-20QXJ Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Drain to Source Voltage (Vdss)
Drive Voltage (Max Rds On, Min Rds On)
FET Type
Gate Charge (Qg) (Max) @ Vgs
Input Capacitance (Ciss) (Max) @ Vds
Mounting Type
Operating Temperature
Power Dissipation (Max)
Rds On (Max) @ Id, Vgs
Storage Temperature
Supplier Device Package
Tape & Reel
Technology
Vgs (Max)
Vgs(th) (Max) @ Id
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PXP8R3-20QXJ Description

Short technical summary and product information.

The Nexperia PXP8R3-20QXJ is a P-channel enhancement mode Field-Effect Transistor (FET) utilizing Trench MOSFET technology. It is housed in an MLPAK33 (SOT8002) surface-mounted device (SMD) plastic package.

 

Key electrical specifications include a drain-source voltage (Vds) of 20V and a gate-source voltage (Vgs) range of ±12V. The Rds(on) is as low as 8.3 mΩ at 12.3A and Vgs of -4.5V. Continuous drain current (Id) is rated at 12.4A at 25°C ambient temperature and up to 65.1A at 25°C case temperature.

 

This MOSFET is suitable for applications such as high-side load switches, battery management, DC-to-DC conversion, and general switching circuits. The MLPAK33 package offers a 3.3 x 3.3 mm footprint, making it suitable for space-constrained designs. The operating temperature range is -55°C to 150°C (TJ).

PXP8R3-20QXJ Quick Information

Product Type: MOSFET
Canonical Name: PXP8R3-20QXJ P-channel Trench MOSFET
Subcategory: P-Channel

PXP8R3-20QXJ Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

PXP8R3-20QXJ Estimated Pricing

Qty Low High
1+ $2.27 $2.27

Estimated market price range - modelled values for guidance only, not live distributor offers.

PXP8R3-20QXJ Features

  • P-channel Trench MOSFET technology.
  • 20V drain-source voltage rating.
  • Low Rds(on) of 8.3mΩ at 12.3A.
  • Compact MLPAK33 (SOT8002) package.
  • Wide -55°C to 150°C operating temperature.

PXP8R3-20QXJ Applications

  • Ideal for high-side load switching.
  • Suitable for battery management circuits.
  • Used in DC-to-DC conversion designs.
  • Applicable for general switching circuits.

PXP8R3-20QXJ FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum drain-source voltage of the PXP8R3-20QXJ?

-20 V

What is the maximum gate-to-source voltage for this MOSFET?

±12 V

What is the maximum drain current at 25°C?

-20.2 A

What package options are available for this device?

SOT8002, MLPAK33, 8-PowerVDFN

What is the operating temperature range?

-55°C to 150°C

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