| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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4,020 pcs
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4020 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Nexperia PXN012-60QLJ is a general-purpose, logic level N-channel enhancement mode Power MOSFET. It is rated for a drain-source voltage of 60V and a continuous drain current of 42A at 25°C case temperature. The MOSFET utilizes Trench technology and offers a low on-state resistance of 11.5mOhm at 10A and 10V gate-source voltage.
This device is housed in a thermally efficient MLPAK33 package, measuring 3.3mm x 3.3mm, making it suitable for space-constrained designs. Key electrical characteristics include a total gate charge of 9.64nC and an input capacitance of 957pF. The operating temperature range is -55°C to 150°C (TJ).
Applications for the PXN012-60QLJ include secondary side synchronous rectification, DC-to-DC converters, motor drive, LED lighting, load switching, auxiliary control, and fan control. Its logic level compatibility ensures ease of integration with low-voltage control signals.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain-source voltage is 60 V.
The typical on-resistance is 9.8 mOhm at 10A and 10V.
The continuous drain current rating is 42A at 25°C.
The operating temperature range is -55°C to 150°C.
The PXN012-60QLJ is in the MLPAK33 package.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1.